Copper indium gallium selenide
CIGS unit cell. Red = Cu, yellow = Se, blue = In/Ga | |
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Properties | |
Chemical formula | CuIn1−xGaxSe2 |
Density | ~5.7 g/cm3 |
Melting point | 1,070 to 990 °C (1,960 to 1,810 °F; 1,340 to 1,260 K) (x = 0–1)[1] |
Band gap | 1.0–1.7 eV (x = 0–1)[1] |
Structure | |
Crystal structure | tetragonal, Pearson symbol tI16 [1] |
Space group | I42d |
Lattice constant | a = 0.56–0.58 nm (x = 0–1), c = 1.10–1.15 nm (x = 0–1) |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). Infobox references |
Copper indium gallium (di)selenide (CIGS) is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium. The material is a solid solution of copper indium selenide (often abbreviated "CIS") and copper gallium selenide. It has a chemical formula of CuIn1−xGaxSe2, where the value of x can vary from 0 (pure copper indium selenide) to 1 (pure copper gallium selenide). CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure, and a bandgap varying continuously with x from about 1.0 eV (for copper indium selenide) to about 1.7 eV (for copper gallium selenide).
Structure
CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure. Upon heating it transforms to the zincblende form and the transition temperature decreases from 1045 °C for x = 0 to 805 °C for x = 1.[1]
Applications
It is best known as the material for CIGS solar cells a thin-film technology used in the photovoltaic industry.[2] In this role, CIGS has the advantage of being able to be deposited on flexible substrate materials, producing highly flexible, lightweight solar panels. Improvements in efficiency have made CIGS an established technology among alternative cell materials.
See also
References
- ^ a b c d Tinoco, T.; Rincón, C.; Quintero, M.; Pérez, G. Sánchez (1991). "Phase Diagram and Optical Energy Gaps for CuInyGa1−ySe2 Alloys". Physica Status Solidi A. 124 (2): 427. Bibcode:1991PSSAR.124..427T. doi:10.1002/pssa.2211240206.
- ^ "DOE Solar Energy Technologies Program Peer Review" (PDF). U.S. department of energy 2009. Retrieved 10 February 2011.
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H2Se H2Se2 +H -H | He | ||||||||||||||||||||
Li2Se | Be | SexByOz | CSe2 OCSe (CH3)2Se | (NH4)2Se | O | F | Ne | ||||||||||||||
Na2Se | MgSe | Al2Se3 | Si | PxSey -P | +S | Cl | Ar | ||||||||||||||
K2Se | CaSe | Sc2Se3 | TiSe2 | V | CrSe Cr2Se3 | MnSe MnSe2 | FeSe | CoSe | NiSe | CuSe | ZnSe | GaSe Ga2Se3 -Ga | GeSe GeSe2 -Ge | As2Se3 As4Se3 | Se2− n | Br | Kr | ||||
Rb2Se | SrSe | Y2Se3 | Zr | NbSe2 NbSe3 | MoSe2 | Tc | Ru | Rh | Pd | Ag2Se | CdSe | In2Se3 | SnSe SnSe2 -Sn | Sb2Se3 | Te | +I | Xe | ||||
Cs2Se | BaSe | * | LuSe Lu2Se3 | Hf | TaSe2 | WSe2 WSe3 | ReSe2 | Os | Ir | PtSe2 | Au | HgSe | Tl2Se | PbSe | Bi2Se3 | Po | At | Rn | |||
Fr | Ra | ** | Lr | Rf | Db | Sg | Bh | Hs | Mt | Ds | Rg | CnSe | Nh | Fl | Mc | Lv | Ts | Og | |||
* | LaSe La2Se3 | CeSe Ce2Se3 | PrSe Pr2Se3 | NdSe Nd2Se3 | Pm | SmSe Sm2Se3 | EuSe Eu2Se3 | GdSe Gd2Se3 | TbSe Tb2Se3 | DySe Dy2Se3 | HoSe Ho2Se3 | ErSe Er2Se3 | TmSe Tm2Se3 | YbSe Yb2Se3 | |||||||
** | Ac | ThSe2 | Pa | USe2 | Np | PuSe | Am | Cm | Bk | Cf | Es | Fm | Md | No |